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[ The PC Guide | Systems and Components Reference Guide | Motherboard and System Devices | System BIOS | BIOS Settings | Advanced Chipset Features ]

DRAM Read Timing / DRAM Burst Read Timing / DRAM Read Wait States

This parameter controls how many clock cycles are required for the burst reads from memory during a four-read "burst". In most modern PCs, reads from the system memory are done in sets of four, because the level 2 cache used in the PC (which is filled by information from the main memory) is 256 bits wide (four sets of 64 bits). The timing, in clock cycles, to perform this quadruple read is normally stated as "x-y-y-y". The first read is slower because the address for the read must be supplied to the memory; the next three are faster because they are read consecutively from the addresses immediately following the first location (no need to supply an address). Memory system timing is discussed in much more detail here.

Using the x-y-y-y notation, the Read Timing or Burst Read Timing setting refers to the "y-y-y" value, the number of clock cycles for the 2nd, 3rd and 4th reads of the four-read cycle. This setting will most often have options like "x-2-2-2", "x-3-3-3" and "x-4-4-4", although in some BIOSes the single number is used instead ("2", "3", "4".) Some BIOSes, especially on older machines, instead refer to read "wait states", which is essentially the same thing, except that it is one less than the number referred to above. A wait state is an extra cycle inserted for the processor to wait for the system memory. In the x-y-y-y notation, the "y" is the total number of cycles for each memory access. "x-1-1-1" is the best you can do, since it always takes at least one cycle. Zero wait states is the best you can do. So "x-3-3-3" is equivalent to 2 wait states.

Some chipsets will have a double value for this setting, with one used for EDO DRAM and another used for FPM DRAM. The system automatically detects which is being used; this is a sort of "semi-automatic" setting. In this case you may see options that look something like "x-2-2-2 / x-3-3-3" or "x-3-3-3 / x-4-4-4-4". The first timing number is used when EDO is detected and the second when FPM is detected.

Your system will operate fastest when this setting is as low as possible. How low you can set this depends on your memory bus speed and the speed and type of memory you are using. In general, the faster your memory bus runs the more cycles it will take to access the memory unless the memory is also made faster. Putting this setting too low will cause memory errors; some of these can appear intermittently and be very difficult to diagnose. Using automatic timing to set this parameter is usually recommended.

By default most BIOSes enable automatic timing settings so this parameter would be "locked out" and not changeable; if you enable manual timing settings this setting will usually default to the slowest possible setting at first, for compatibility reasons.

Note: This setting is normally controlled by the DRAM Timing or Auto Configuration mode, and if automatic settings are enabled you may not be able to change this.

Note: On some BIOSes this setting is combined with DRAM Write Timing / DRAM Write Burst Timing. In this case the same timing is used for both reads and writes.

Next: DRAM Write Timing / DRAM Burst Write Timing / DRAM Write Wait States


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